Bulk band gaps in divalent hexaborides

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Abstract

Complementary ARPES and SXE/XAS experiments on divalent CaB6 quantitatively agree to provide a clear case for the existence of a large energy scale bulk band gap. As such, small energy scale excitonic-insulator or hybridization gap models based on X-point band overlap are thus precluded. The positioning of the bulk chemical potential in the conduction band and the resulting n-type carriers observed in nominally stoichiometric samples implicate boron vacancies.

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Angelo Bianchi
University of Urbino (PhD)

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