Fabrication of high-performance ultrathin In 2 O 3 film field-effect transistors and biosensors using chemical lift-off lithography [Book Review]

Abstract

© 2015 American Chemical Society. We demonstrate straightforward fabrication of highly sensitive biosensor arrays based on field-effect transistors, using an efficient high-throughput, large-area patterning process. Chemical lift-off lithography is used to construct field-effect transistor arrays with high spatial precision suitable for the fabrication of both micrometer- and nanometer-scale devices. Sol-gel processing is used to deposit ultrathin In 2 O 3 films as semiconducting channel layers. The aqueous sol-gel process produces uniform In 2 O 3 coatings with thicknesses of a few nanometers over large areas through simple spin-coating, and only low-temperature thermal annealing of the coatings is required. The ultrathin In 2 O 3 enables construction of highly sensitive and selective biosensors through immobilization of specific aptamers to the channel surface; the ability to detect subnanomolar concentrations of dopamine is demonstrated.

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Author Profiles

Hsiang-Yun Chen
Academia Sinica
Joanne Kim
University of Toronto
Yun Yang
University of California, Berkeley
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