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Growth of epitaxial silicon layers by vacuum evaporation
Philosophical Magazine 9 (100):691-701 (1964)
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Tripyramids and associated defects in epitaxial silicon layers.G. R. Booker - 1965 - Philosophical Magazine 11 (113):1007-1020.
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Citations of this work
A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques.G. R. Booker & B. A. Joyce - 1966 - Philosophical Magazine 14 (128):301-315.
Growth of epitaxial silicon layers by vacuum evaporation.G. R. Booker & B. A. Unvala - 1965 - Philosophical Magazine 11 (109):11-30.
Perfection of Expitaxial Silicon Layers Grown by the Pyrolysis of Silane.G. R. Booker, B. A. Joyce & R. R. Bradley - 1964 - Philosophical Magazine 10 (108):1087-1091.
Kinetics of the induction period for the nucleation of silicon on silicon substrates at U.H.V.R. J. Bennett & R. W. Gale - 1970 - Philosophical Magazine 22 (175):135-142.
Tripyramids and associated defects in epitaxial silicon layers.G. R. Booker - 1965 - Philosophical Magazine 11 (113):1007-1020.
References found in this work
Growth mechanism and defect structures in epitaxial silicon.J. M. Charig, B. A. Joyce, D. J. Stirland & R. W. Bicknell - 1962 - Philosophical Magazine 7 (83):1847-1860.
Vacuum evaporated silicon layers free from stacking faults.G. R. Booker & B. A. Unvala - 1963 - Philosophical Magazine 8 (93):1597-1598.
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